Smart Structures and Systems

Volume 36, Number 3, 2025, pages 139-155

DOI: 10.12989/sss.2025.36.3.139

Overhaul of nano-sensors through inventive head design and certified performance improvements using construction building information modeling

Haoxiang Guo, Gongxing Yan, Sultan Saleh Alnahdi, Liang Yin, Belgacem Bouallegue, Abdullah Alnutayfat, Rania M. Ghoniem, Hamid Assilzadeh and José Escorcia-Gutierrez

Abstract

Piezoresistive MEMS pressure sensors are widely deployed across biomedical, automotive, and aerospace sectors, yet their sensitivity is often limited by suboptimal membrane geometry and material selection. While prior research has explored isolated design modifications, there remains a lack of systematic, comparative analysis integrating multiple geometric enhancements with material optimization for maximum performance. This study aims to address this gap by developing and evaluating a four-stage structural optimization framework that systematically enhances sensor sensitivity. The novelty lies in combining targeted geometric modifications, central relocation of transverse resistors, introduction of peripheral grooves, addition of sub-membrane support beams, and membrane thickness optimization, with a comparative assessment of silicon (Si) and germanium (Ge) membranes. This integrated approach enables a unified understanding of how architecture and material mechanics interact to influence piezoresistive output. The methodology employed high-fidelity finite element modeling (FEM) in COMSOL Multiphysics to simulate coupled mechanical–electrical behavior. Input parameters included precise geometric configurations, material properties, and applied pressure (1 psi), while outputs comprised stress distribution, maximum deflection, and Wheatstone bridge output voltage. Mesh convergence analysis ensured numerical accuracy without excessive computational cost. Simulation results show cumulative sensitivity improvements of 256.8% for Si and 140.6% for Ge over baseline designs. After thickness optimization, sensitivities reached 11.99 mV/psi (Si) and 12.51 mV/psi (Ge), closing the performance gap between materials. Si benefited most from thickness reduction due to its higher Young

Key Words

Building Information Modeling (BIM); finite element modelling; germanium; membrane geometry optimization; Piezoresistive MEMS pressure sensor; silicon

Address

(1) Haoxiang Guo, Gongxing Yan: School of Intelligent Construction, Luzhou Vocational and Technical College, Luzhou 646000, Sichuan, China; (2) Sultan Saleh Alnahdi: Civil Engineering Department, College of Engineering, University of Business and Technology, Jeddah 21361, Saudi Arabia; (3) Liang Yin: Department of Civil Engineering, Faculty of Engineering, University of Malaya, 50603, Kuala Lumpur, Malaysia; (4) Belgacem Bouallegue: Department of Computer Engineering, College of Computer Science, King Khalid University, ABHA, 61421, Saudi Arabia; (5) Abdullah Alnutayfat: Department of Civil Engineering, College of Engineering in Al-Kharj, Prince Sattam Bin Abdulaziz University, Al-Kharj, 11942, Saudi Arabia; (6) Rania M. Ghoniem: Department of Information Technology, College of Computer and Information Sciences, Princess Nourah bint Abdulrahman University, P.O. Box 84428, Riadh 11671, Saudi Arabia; (7) Hamid Assilzadeh: Institute of Research and Development, Duy Tan University, Da Nang, Viet Nam; (8) Hamid Assilzadeh: School of Engineering & Technology, Duy Tan University, Da Nang, Viet Nam; (9) and José Escorcia-Gutierrez: Department of Computational Science and Electronics, Universidad de la Costa, CUC, Barranquilla, 080002, Colombia.