Photo-thermo-elastic interaction in a semiconductor material with two relaxation times by a focused laser beam

A. Jahangir , F. Tanvir , A. M. Zenkour

Abstract

The effect of relaxation times is studied on plane waves propagating through semiconductor half-space medium by using the eigen value approach. The bounding surface of the half-space is subjected to a heat flux with an exponentially decaying pulse and taken to be traction free. Solution of the field variables are obtained in the form of series for a general semiconductor medium. For numerical values, Silicon is considered as a semiconducting material. The results are represented graphically to assess the influences of the thermal relaxations times on the plasma, thermal, and elastic waves.

Key Words

semiconductor material; eigen value approach; elastic waves; focused laser beam; generalized thermoelastic theories

Address

A. Jahangir and F. Tanvir — Department of Mathematics, COMSATS University Islamabad, Wah Campus 47040, Pakistan
A. M. Zenkour — 1.) Department of Mathematics, Faculty of Science, King Abdulaziz University, P.O. Box 80203, Jeddah 21589, Saudi Arabia 2.) Department of Mathematics, Faculty of Science, Kafrelsheikh University, Kafrelsheikh 33516, Egypt

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