Light-emitting mechanism varying in Si-rich-SiNx controlled by film's composition

Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the SiN_x films on Si (001) substrates. The film composition was controlled via the flow ratio of silane (SiH₄) and ammonia (NH₃) in the range of <i>R</i> = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at 1100&#176;C for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in SiN_x films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300K in the range of 1.5-3.5 eV were detected and non-monotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the &#34;blue-orange&#34; emission is due to the radiative defects in a SiNx matrix, whereas the &#34;red&#34; and &#34;infrared&#34; PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in SiN_x films is discussed. The ways to control the dominant PL emission mechanisms are proposed.