Advances in Nano Research
Volume 5, Number 1, 2017, pages 61-67
DOI: 10.12989/anr.2017.5.1.061
An approach to model the temperature effects on I-V characteristics of CNTFETs
Roberto Marani , Anna G. Perri
Abstract
A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFETbehaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.
Key Words
nanoelectronic devices; carbon nanotube field effect transistors; modeling; device simulation; I-V characteristics; temperature effects; computer aided design
Address
- (1) Roberto Marani — Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l\'Automazione, Bari, Italy
- (2) Anna G. Perri — Dipartimento di Ingegneria Elettrica e dell\'Informazione, Laboratorio di Dispositivi Elettronici, Politecnico di Bari, Italy.
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