Analysis of photothermal response in a two-dimensional semiconducting material thermally excited by pulse heat flux

Tareq Saeed and Ibrahim Abbas

Abstract

A mathematical model of Lord-Shulman photo-thermal theorem induced by pulse heat flux is presented to study the propagations waves for plasma, thermal and elastic in two-dimensional semiconductor materials. The medium is assumed initially quiescent. By using Laplace-Fourier transforms with the eigenvalue method, the variables are obtained analytically. A semiconductor medium such as silicon is investigated. The displacements, stresses, the carrier density and temperature distributions are calculated numerically and clarified graphically. The outcomes show that thermal relaxation time has varying degrees of effects on the studying fields.

Key Words

eigenvalues approach; Laplace-Fourier transform; photo-thermal wave; Thermal relaxation time

Address

Tareq Saeed: Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Mathematics Department, King Abdulaziz University, Jeddah, Saudi Arabia Ibrahim Abbas: Nonlinear Analysis and Applied Mathematics Research Group (NAAM), Mathematics Department, King Abdulaziz University, Jeddah, Saudi Arabia; Department of Mathematics, Faculty of Science, Sohag University, Sohag, Egypt

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