Generalized photo-thermal interactions under variable thermal conductivity in a semi-conducting material

In this article, we explore the issue concerning semiconductors half-space comprised of materials with varying thermal conductivity. The problem is within the framework of the generalized thermoelastic model under one thermal relaxation time. The half-boundary space's plane is considered to be traction free and is subjected to a thermal shock. The material is supposed to have a temperature-dependent thermal conductivity. The numerical solutions to the problem are achieved using the finite element approach. To find the analytical solution to the linear problem, the eigenvalue approach is used with the Laplace transform. Neglecting the new parameter allows for comparisons between numerical findings and analytical solutions. This facilitates an examination of the physical quantities in the numerical solutions, ensuring the accuracy of the proposed approach.